GaN Semiconductors: Revolutionizing Power Electronics
Emergence of GaN Technology The compound semiconductor gallium nitride (GaN) has emerged as a promising material for applications requiring high power and efficiency. GaN provides significant advantages over traditional silicon and gallium arsenide semiconductors due to its wide bandgap and superior material properties. With a bandgap of 3.4 eV, over two times larger than silicon, GaN enables...
0 Comments 0 Shares 518 Views 0 Reviews