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Description
A PowerTrench ® N-Channel MOSFET is the FDG6335N. The purpose of this N-Channel MOSFET was to improve the overall efficiency of DC/DC converters using synchronous or classic switching PWM controllers. It was optimized using compact switching regulators, resulting in extraordinarily low RDS(ON) and gate charge (QG) in a small package.
CAD Model
Symbol
Footprint
Features
• 0.7 A, 20 V. RDS(ON) = 300 mΩ@ VGS = 4.5 V
RDS(ON) = 400 mΩ@ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC70-6 surface mount package
Marking Diagram
Alternatives
Part Number | Description | Manufacturer |
FDG6335NTRANSISTORS | Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation |
FDG6335ND87ZTRANSISTORS | Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation |
Applications
• DC/DC converter
• Power management
• Loadswitch