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Description

A PowerTrench ® N-Channel MOSFET is the FDG6335N. The purpose of this N-Channel MOSFET was to improve the overall efficiency of DC/DC converters using synchronous or classic switching PWM controllers. It was optimized using compact switching regulators, resulting in extraordinarily low RDS(ON) and gate charge (QG) in a small package.

CAD Model

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Footprint

Features

• 0.7 A, 20 V. RDS(ON) = 300 mΩ@ VGS = 4.5 V

RDS(ON) = 400 mΩ@ VGS = 2.5 V

• Low gate charge   (1.1 nC typical)

• High performance trench technology for extremely low RDS(ON)

• Compact industry standard SC70-6 surface mount package

Marking Diagram

Alternatives

Part Number Description Manufacturer
FDG6335NTRANSISTORS Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation
FDG6335ND87ZTRANSISTORS Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation

Applications

• DC/DC converter

• Power management

• Loadswitch

Package