Industry Analysis
GaN Power Device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028. Data Bridge Market Research report on GaN power device market provides analysis and insights regarding the various factors expected to be prevalent throughout the forecast period while providing their impacts on the market’s growth.
Additionally, the credible GaN Power Device Market report helps the manufacturer in finding out the effectiveness of the existing channels of distribution, advertising programs, or media, selling methods and the best way of distributing the goods to the eventual consumers. Taking up such market research report is all the time beneficial for any company whether it is a small scale or large scale, for marketing of products or services. It makes effortless for Semiconductors and Electronics industry to visualize what is already available in the market, what market anticipates, the competitive environment, and what should be done to surpass the competitor.
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Gallium nitride (GaN) transistors have progressed as an improved performance alternative of silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to the silicon devices.
Major factors that are expected to boost the growth of the GaN power device market in the forecast period are the vast revenue generation from the customer electronics and automotive verticals and the wide bandgap property of GaN material supporting innovation.
The GaN Power Device Market report encompasses various segments linked to Semiconductors and Electronics industry and market with comprehensive research and analysis. These comprise industry outlook with respect to critical success factors (CSFs), industry dynamics that mainly covers drivers and restraints, market segmentation & value chain analysis, key opportunities, application and technology outlook, regional or geographical insight, country-level analysis, key company profiles, competitive landscape, and company market share analysis. All the data, figures and information are backed up by well recognized analysis tools which include SWOT analysis and Porter’s Five Forces analysis. So, take business to the peak level of growth with the all-inclusive Data Bridge Market research report.
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Industry Segmentation and Size
- On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. On the basis of voltage range, the GaN power device market is segmented into <200 volt, 200–600 volt, >600 volt),
- On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter is further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging.
- On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
- On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
- On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
- On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.
Market Country Level Analysis
The countries covered in the GaN power device market report is the
· U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
A reliable GaN Power Device Market marketing report proves to be the finest and excellent market research report as it is formulated with the following critical factors. These consist of primary research, benchmarking studies, secondary research, company profiles, competitive intelligence & reporting, syndicated research, data collection, data processing and analysis, survey design, and survey programming. The report performs market study and analysis to provide market data by considering new product development from beginning to launch. The Semiconductors and Electronics business report also provides evaluations based on the market type, organization size, availability on-premises, end-users’ organization type, and the availability in areas such as North America, South America, Europe, Asia-Pacific and Middle East & Africa.
The major players covered in the GaN power device market report is
· Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately.
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